Method for analyzing radiation sensitivity of integrated circuits

A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered. The circuit is operated under normal bias conditions during the application of radiation in a dosage that is likely to cause malfunction of at least some transistors, while the circuit is monitored for failure of the irradiated transistor. When a radiation sensitive transistor is found, then the radiation beam is further narrowed and, using a fresh integrated circuit, a very narrow beam is applied to different parts of the transistor, such as its junctions, to locate the points of greatest sensitivity

New technologies for radiation-hardening analog to digital converters

Surveys of available Analog to Digital Converters (ADC) suitable for precision applications showed that none have the proper combination of accuracy and radiation hardness to meet space and/or strategic weapon requirements. A development program which will result in an ADC device which will serve a number of space and strategic applications. Emphasis was placed on approaches that could be integrated onto a single chip within three to five years

Total integrated dose testing of solid-state scientific CD4011, CD4013, and CD4060 devices by irradiation with CO-60 gamma rays

The total integrated dose response of three CMOS devices manufactured by Solid State Scientific has been measured using CO-60 gamma rays. Key parameter measurements were made and compared for each device type. The data show that the CD4011, CD4013, and CD4060 produced by this manufacturers should not be used in any environments where radiation levels might exceed 1,000 rad(Si)

A comparison of radiation damage in liner ICs from cobalt-60 gamma rays and 2.2-MeV electrons

The total ionizing dose response of fourteen IC types from eight manufacturers was measured using Co-60 gamma rays and 2.2-MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source is not a suitable simulation source for some systems because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here

Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose

Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months

Substructure around M31 : Evolution and Effects

We investigate the evolution of a population of 100 dark matter satellites orbiting in the gravitational potential of a realistic model of M31. We find that after 10 Gyr, seven subhalos are completely disrupted by the tidal field of the host galaxy. The remaining satellites suffer heavy mass loss and overall, 75% of the mass initially in the subhalo system is tidally stripped. Not surprisingly, satellites with pericentric radius less than 30 kpc suffer the greatest stripping and leave a complex structure of tails and streams of debris around the host galaxy. Assuming that the most bound particles in each subhalo are kinematic tracers of stars, we find that the halo stellar population resulting from the tidal debris follows an r^{-3.5} density profile at large radii. We construct B-band photometric maps of stars coming from disrupted satellites and find conspicuous features similar both in morphology and brightness to the observed Giant Stream around Andromeda. An assumed star formation efficiency of 5-10% in the simulated satellite galaxies results in good agreement with the number of M31 satellites, the V-band surface brightness distribution, and the brightness of the Giant Stream. During the first 5 Gyr, the bombardment of the satellites heats and thickens the disk by a small amount. At about 5 Gyr, satellite interations induce the formation of a strong bar which, in turn, leads to a significant increase in the velocity dispersion of the disk.Comment: 45 pages, 18 figures. To be submitted to the Astrophysical Journal, version 2.0 : scale height value corrected, references added, and some figures have been modifie

Control of unstable steady states by time-delayed feedback methods

We show that time-delayed feedback methods, which have successfully been used to control unstable periodic ortbits, provide a tool to stabilize unstable steady states. We present an analytical investigation of the feedback scheme using the Lambert function and discuss effects of both a low-pass filter included in the control loop and non-zero latency times associated with the generation and injection of the feedback signal.Comment: 8 pages, 11 figure